Thin-film encapsulation

ABSTRACT

A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 10 11  cm −3  when an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 10 11  cm −3 , and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. provisional patent applicationSer. No. 62/536,559, filed Jul. 25, 2017, which is hereby incorporatedherein by reference.

BACKGROUND OF THE INVENTION Field of the Invention

Embodiments described herein generally relate to a thin-filmencapsulation (TFE) structure formed over a device on a substrate and amethod of forming the same.

Description of the Related Art

Organic light emitting diode displays (OLED displays) have recentlygained significant interest in display applications in view of theirfaster response times, larger viewing angles, higher contrast, lighterweight, lower power consumption and amenability to being formed onflexible substrates as compared to conventional LCD or plasma displays.In addition to organic materials used in OLED devices, many polymermaterials have been developed for small molecule, flexible organic lightemitting diode (FOLED) and polymer light emitting diode (PLED) displays.Many of these organic and polymer materials are suitable for thefabrication of complex, multi-layer devices on a range of substrates,making them ideal for various transparent multi-color displayapplications, such as thin flat panel display (FPD), electrically pumpedorganic laser, and organic optical amplifier.

OLED devices may have limited lifetimes, characterized by a decrease inelectroluminescence efficiency and an increase in drive voltage thereof.One known reason for these degradations of OLED device performance isthe formation of non-emissive dark spots or regions within an OLEDdisplay due to moisture and/or oxygen ingress into the organic layers ofthe OLED device. For this reason, OLED devices are typicallyencapsulated with a thin film including one or more moisture-transportlimiting, transparent materials. The moisture and oxygen blockingproperties of these thin-film encapsulants are generally directlyrelated to the thickness of the thin-film encapsulants. Currentthin-film encapsulants—including barrier layer(s) and bufferlayer(s)—generally have a thickness from about 50,000 Å to about 100,000Å to prevent the OLED device from degrading due to moisture and/oroxygen penetration during the useful life of the OLED device. Although50,000 Å to 100,000 Å is relatively thin, these thicknesses reduce theflexibility of the OLED device and can cause cracking when the OLEDdevice is subjected to bending, folding, rolling, or similar stresses.

Therefore, there is a need for an improved thin-film encapsulant thatcan perform the moisture and oxygen-blocking properties of currentthin-film encapsulants without the problems described above.

SUMMARY OF THE INVENTION

Embodiments of the disclosure generally relate to improved methods forencapsulating organic light emitting diodes and related apparatuses. Inone embodiment, a method of encapsulating an organic light emittingdiode (OLED) is provided. The method includes generating a first plasmain a process chamber, the first plasma having an electron density of atleast 10¹¹ cm⁻³, wherein an OLED device is positioned within the processchamber, the OLED device including a substrate and an OLED formed on thesubstrate; pretreating one or more surfaces of the OLED and substratewith the first plasma; depositing a first barrier layer comprisingsilicon and nitrogen over the OLED by generating a second plasmacomprising silicon and nitrogen in the process chamber, the secondplasma having an electron density of at least 10¹¹ cm⁻³ and the secondplasma generated after the first plasma; depositing a buffer layer overthe first barrier layer; and depositing a second barrier layercomprising silicon and nitrogen over the buffer layer by generating athird plasma comprising silicon and nitrogen in the process chamber, thethird plasma generated after the depositing of the buffer layer.

In another embodiment, a method of encapsulating an organic lightemitting diode (OLED) device is provided. The method includes generatinga first plasma comprising silicon and nitrogen; depositing a firstportion of a first barrier layer comprising silicon and nitrogen overthe OLED with the first plasma; generating a second plasma comprisingsilicon and nitrogen; and depositing a second portion of the firstbarrier layer comprising silicon and nitrogen over the first portion ofthe first barrier layer with the second plasma, wherein a density of thefirst plasma and the second plasma differ by a factor of at least 100.

In another embodiment, a method of encapsulating an organic lightemitting diode (OLED) device is provided. The method includes generatinga first plasma comprising silicon and nitrogen in a first processchamber; depositing a first portion of a first barrier layer comprisingsilicon and nitrogen over the OLED with the first plasma; generating asecond plasma comprising silicon and nitrogen in a second processchamber; depositing a second portion of the first barrier layercomprising silicon and nitrogen over the first portion of the firstbarrier layer with the second plasma, wherein a density of the firstplasma and the second plasma differ by a factor of at least 100;depositing a buffer layer over the first barrier layer in a thirdprocess chamber; and depositing a second barrier layer over the bufferlayer in a fourth process chamber, wherein the first process chamber,the second process chamber, the third process chamber, and the fourthprocess chamber are arranged around a single transfer chamber.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

FIG. 1 is a side cross-sectional view of an OLED device including anOLED and an encapsulant layer formed over the OLED, according toembodiments described herein.

FIG. 2A is a schematic cross-sectional view of an exemplary processchamber, according to one embodiment.

FIG. 2B illustrates a plan view of some features of the process chamberillustrated in FIG. 2A, according to one embodiment.

FIG. 2C is a cross sectional view of one of the plurality of antennasillustrated in FIG. 2B, according to one embodiment.

FIG. 2D is a process flow diagram of a method of encapsulating theorganic light emitting diode OLED with the encapsulant of FIG. 1,according to one embodiment.

FIG. 3A is a side cross-sectional view of an OLED device including theOLED of FIG. 1 and an encapsulant formed over the OLED, according toanother embodiment.

FIG. 3B is a schematic plan view of a cluster tool that can be used toform the encapsulant over the OLED of the OLED device of FIG. 3A,according to one embodiment.

FIG. 3C is a process flow diagram of a method of encapsulating the OLEDwith the encapsulant of FIG. 3A using the cluster tool of FIG. 3B,according to one embodiment.

FIGS. 4A-4I show comparative measurements of barrier properties andother properties of silicon nitride layers deposited using high-densityplasma chemical vapor (HDP-CVD) deposition processes, according toembodiments described herein, and of silicon nitride films depositedusing conventional capacitive coupled plasma (CCP) PECVD deposition.

FIGS. 5A-5F illustrate the effect biasing the substrate support can haveon the properties of silicon nitride layers deposited using an HDP-CVDprocess.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation. The drawings referred to here should not beunderstood as being drawn to scale unless specifically noted. Also, thedrawings are often simplified and details or components omitted forclarity of presentation and explanation. The drawings and discussionserve to explain principles discussed below, where like designationsdenote like elements.

DETAILED DESCRIPTION

Embodiments of the disclosure include a method and related apparatusesfor forming improved encapsulants for organic light emitting diode(OLED) devices. The encapsulants described below have a reducedthickness compared to conventional OLED encapsulants while stilleffectively blocking moisture and oxygen migration from damaging aformed OLED device. This reduced thickness increases throughput duringmanufacturing while also making the OLED device more flexible anddurable than OLED devices having a thicker encapsulant, or encapsulantstructure.

FIG. 1 is a side cross-sectional view of an OLED device 100 includingOLED 102 and an encapsulant 111 formed over the OLED 102, according toembodiments described herein. The OLED device 100 includes a substrate106 and the OLED 102 formed over the substrate 106. The OLED 102 can beformed from a series of deposition using masks. Typically, the substrate106 can be formed of a glass, metallic (e.g., copper or stainlesssteel), or polymer material. For example, in some embodiments a polymersubstrate is made of a thin, flexible polymer sheet, such as a polyimide(PI), a polyethyleneterephthalate (PET) or a polyethylenenaphthalate(PEN) sheet. The OLED device 100 can further include a contact layer 108disposed between the OLED 102 and the substrate 106. The contact layer108 includes a transparent conductive oxide, such as indium tin oxide,indium zinc oxide, zinc oxide, or tin oxide.

The encapsulant 111 is a thin-film encapsulant (TFE) formed over theOLED 102 to protect the OLED device 100 from performance degradationresulting from exposure of the OLED 102 to moisture and/or oxygen duringthe normal lifetime of the formed OLED device. The encapsulant 111 caninclude a first barrier layer 110, a buffer layer 112, and a secondbarrier layer 114. In other embodiments, the encapsulant 111 can includea plurality of buffer layers and more than two barrier layers, whereeach buffer layer is disposed between two barrier layers, such as thebuffer layer 112 disposed between barrier layers 110 and 114. In someembodiments, at least one of the barrier layers 110, 114 is formed usinga high-density plasma (i.e., a plasma having an electron density of atleast 10¹¹ cm⁻³) as described in more detail below. In still otherembodiments, one or more of the barrier layers 110, 114 can include twoor more portions, where each portion is formed from a plasma having adifferent density (e.g., a first portion formed using a high-densityplasma with an electron density of at least 10¹¹ cm⁻³ and a secondportion formed from a lower-density plasma, such as a plasma having anelectron density of about 10⁹ cm⁻³) as described in more detail below.The at least one portion of at least one of the barrier layers 110, 114formed from the high-density plasma has improved moisture and oxygenblocking properties relative to a portion of similar thickness formedfrom a lower-density plasma.

The first barrier layer 110 can include a dielectric film, such assilicon nitride (SiN), silicon oxynitride (SiON), silicon dioxide(SiO₂), aluminum oxide (Al₂O₃), aluminum nitride (AlN), titanium oxide(TiO₂), zirconium (IV) oxide (ZrO₂) or combinations thereof. The bufferlayer 112 can be an organic layer, such as a hexamethyldisiloxane(HMDSO) layer, for example a fluorinated plasma-polymerized HMDSO(pp-HMDSO:F) and/or a polymer material including hydrogen, carbon, andoxygen, where the polymer material has a formula C_(x)H_(y)O_(z),wherein x, y and z are integers. In other embodiments, the buffer layermaterial is selected from a group consisting of polyacrylate, parylene,polyimides, polytetrafluoroethylene, copolymer of fluorinated ethylenepropylene, perfluoroalkoxy copolymer resin, copolymer of ethylene andtetrafluoroethylene, parylene, and combinations thereof.

At least one of the barrier layers 110, 114 can be a barrier layer(e.g., a silicon nitride layer) deposited using a high-density plasma(i.e., a plasma having an electron density of at least 10¹¹ cm⁻³) asdescribed in more detail below. The barrier layers 110, 114 are spacedapart in the Z-direction (first direction) above the OLED 102 (i.e., noton the sides of the OLED 102). The barrier layers which are depositedusing a high-density plasma can have a thickness of from about 50 Å toabout 5000 Å, such as about 100 Å to about 2500 Å in the Z-directionover the OLED 102. Barrier layers in thin-film encapsulants aregenerally formed using lower density plasmas (i.e., a plasma having anelectron density of about 10⁹ cm⁻³) using techniques, such as acapacitively coupled plasma (CCP) process. A lower density plasma formedduring a CCP process is generally used to achieve desired deposited film(e.g., uniformity, stress, etc.) and plasma properties (e.g.,uniformity, reduced arcing, etc.). In some embodiments, the density ofthe high-density plasma (e.g., electron density of about 10¹¹ cm⁻³) usedto form the at least one barrier layer is at least 100 times greaterthan the density of the lower-density plasma (e.g., electron density ofabout 10⁹ cm⁻³) used to form another barrier layer in the encapsulant111.

Encapsulants (including individual barrier and buffer layers) using onlybarrier layers formed using conventional lower-density plasmas generallyrequire a thickness of greater than 50,000 Å to obtain themoisture-blocking and/or oxygen-blocking properties of the barrierlayer, such as a water vapor transmission rate (WVTR) of less than1×10⁻⁴ g/m² day. However, for example, an encapsulant using barrierlayers of SiN deposited using a high-density plasma can have a WVTR ofless than 1×10⁻⁴ g/m² day with less than 25,000 A total encapsulantthickness. Furthermore, the individual barrier layers of silicon nitridein these encapsulants can be formed from a high-density plasma and canhave thicknesses from about 50 Å to about 5000 Å, such as about 100 Å toabout 2500 Å resulting in a more flexible OLED device compared tobarrier layers formed from lower density plasmas having a thickness ofat least 5000 Å. OLED devices including these thinner barrier layers arealso less prone to cracking relative to OLED devices that containbarrier layers formed with lower-density plasmas, which can improve thefunctionality and durability of the OLED device ultimately producedusing the barrier layer(s) formed with high-density plasmas.

FIG. 2A is a side cross-sectional schematic view of an exemplary processchamber 200, according to one embodiment. Referring to FIGS. 1 and 2A,the process chamber 200 is described. The process chamber 200 can beused for deposition of one or more of the layers included in theencapsulant 111 of FIG. 1. In some embodiments, the process chamber 200may be further used to pretreat the OLED device 100 before theencapsulant 111 is formed over the OLED 102. In one embodiment, theprocess chamber 200 may be used to form one or more of the barrierlayers 110, 114 of the encapsulant 111. The one or more barrier layers110, 114 can be silicon nitride layers, deposited according to themethods described herein.

The process chamber 200 is configured to process large area substrates,such as substrates having a surface area greater than about 0.1 m², suchas greater that about 2 m². The process chamber 200 is configured toprocess a substrate which is oriented in a horizontal position. In otherembodiments, the methods described herein are used in a process chamberconfigured to process substrates oriented in a vertical or substantiallyvertical position.

The process chamber 200 features one or more side walls 204, a lid 208,and a bottom 206 which define a processing volume 299. The processingvolume 299 is fluidly coupled to a vacuum 209 such as one or morededicated vacuum pumps. The process chamber 200 further includes asubstrate support 210 disposed therein. The substrate support 210includes a shaft 214 extending through the chamber bottom 206, whichraises and lowers the substrate support 210 to facilitate transfer ofthe substrate 106 to and from the process chamber 200.

The substrate 106 is loaded into the processing volume 299 through anopening 212 in one of the side walls 204, which is conventionally sealedwith a door or a slit valve (not shown) during deposition or otherprocesses. A plurality of lift pins 216 are movably disposed through thesubstrate support 210 to facilitate transferring of the substrate 106 toand from the substrate support 210. When the substrate support 210 is ina lowered position the plurality of lift pins 216 extend above thesurface of the substrate support 210 to lift the substrate 106 foraccess by a robot handler (not shown). When the substrate support 210 isin a raised position the plurality of lift pins 216 are flush with, orbelow, the surface of the substrate support 210 and the substrate 106rests directly on the substrate support 210 for processing. The liftpins 216 can be moved by contact of their lower ends with a stationaryor movable pin plate (not shown). The substrate support 210 can furtherinclude a resistive heater 298 coupled to a controller 280 as well ascooling fluid conduits 296 that in combination are used to control thetemperature of the substrate 106 disposed on the substrate support 210during deposition.

In some embodiments, an electrical bias may be provided to the substratesupport 210 during processing, such as during a deposition. Thesubstrate support 210 can include a bias electrode 250 disposed on or inthe substrate support 210. The bias electrode 250 is coupled to a biaspower supply 255 which provides DC power, pulsed DC power, AC power,pulsed AC power, RF power, pulsed RF power, or a combination thereof. Inone embodiment, the substrate support 210 is subjected to an electricalbias during deposition by charging the bias electrode 250 to create anegative bias on the substrate support 210 and/or the substrate 106. Insome embodiments, the substrate support 210 further includes anelectrostatic chuck electrode (not shown) on or in the substrate support210. Typically, the electrostatic chuck electrode is coupled to a DCpower source to retain the substrate 106 on a surface thereon.

The process chamber 200 further includes a plurality of tubular gasdistribution conduits 221 and a plurality of antennas 233 each disposedabove the substrate support 210 in the process chamber 200. Theplurality of gas distribution conduits 221 can be used to distributeprocess gases from gas inlets 222A, 222B into the processing volume 299.The plurality of gas distribution conduits 221 are located between thesubstrate 106 disposed on the substrate support 210 and a plane in whichthe plurality of antennas 233 are located. In one embodiment, each gasdistribution conduit 221 can be spaced apart from a surface of thesubstrate 106 by substantially the same vertical spacing distance, suchas between about 3000 mil and about 10000 mil. A plurality of holes 223disposed in the gas distribution conduits 221 face the substrate 106 andprovide a substantially uniform gas flow over the surface of thesubstrate 106.

In some embodiments, such as embodiments in which a silicon nitridebarrier layer (e.g., barrier layer 110 in FIG. 1) is formed, a siliconprecursor and one or more nitrogen precursors, along with a carrier gaswhen used, are mixed to flow together through the same gas distributionconduit 221. Each end of the gas distribution conduit 221 is coupled toan individual gas inlet 222A or 222B to provide a more uniform pressurealong the length of the gas distribution conduit 221, and thus a moreuniform gas flow from the plurality of holes 223 disposed therein. Inother embodiments, each of the precursor gases flow through separate gasdistribution conduits 221 to prevent the precursor gases from reactingwith each other before the precursor gases reach the surface of thesubstrate 106.

The process chamber 200 enables high-density plasma assisted chemicalvapor deposition (CVD) process using the plurality of antennas 233disposed within and extending across the processing volume 299. In thisembodiment, the high-density plasma source is a linear microwave plasmasource (LPS) (also referred to as antennas 233), however, the methodsdescribed herein can be used with any suitable high-density plasmasource, such as electron cyclotron resonance (ECR) plasma source or aninductively coupled plasma (ICP) source. Importantly, these high-densityplasma deposition techniques can achieve high deposition rates (e.g.,4000 Å/min) without any significant risk of arcing while there can be asignificant risk of arcing inside CCP chambers or elsewhere in the RFcircuit when similar deposition rates are attempted for CCP chambers.The occurrence of arcing during a plasma deposition is known to lead tounstable plasmas and nonuniform process results and can even damage thedevice being fabricated. Herein, the plurality of antennas 233 extendthrough a dielectric tube 237 (see FIG. 2C) extending across the processchamber 200 to provide an interior volume spanning the process chamber200 isolated from the processing volume 299 of the process chamber 200.Each antenna 233 is located in an antenna plane between the chamber lid208 and the planar arrangement of the plurality of gas distributionconduits 221. One or more microwave generators 230, each coupled to apower source 232, are coupled to one or both ends of each of theantennas 233. Cooling gas flow is provided to each of the antennas 233from a cooling gas inlet 243 coupled to a first end of each of thedielectric tubes 237 and a cooling gas exhaust 245 coupled to a secondend of each of the dielectric tube 237. Typical cooling gases includeclean dry air (CDA) and N₂.

FIG. 2C is a cross sectional view of one of the plurality of antennas233 illustrated in FIG. 2B, according to one embodiment. The antenna 233generally includes a conductive stub 235 for radiating microwave energyinto the processing volume 299 surrounded by a dielectric tube 237, suchas a quartz tube, substantially coaxial therewith. Electromagnetic wavesfrom the stubs 235 are radiated into the processing volume 299 throughthe dielectric tube 237 where they form a plasma of the process gasesintroduced from the plurality of gas distribution conduits 221.

FIG. 2B illustrates a plan view of some features of the process chamber200 illustrated in FIG. 2A, according to one embodiment. The pluralityof gas distribution conduits 221 are spaced apart from each other in aparallel arrangement above the substrate 106 on the substrate support210 (see FIG. 2A for substrate support 210). Each gas distributionconduit 221 is located between two parallel antennas 233 of theplurality of antennas 233, which are also spaced apart from each otherin a parallel arrangement above the substrate support 210 (FIG. 2A).

FIG. 2D is a process flow diagram of a method 1000 of encapsulating theOLED 102 with the encapsulant 111 of FIG. 1, according to oneembodiment. In this exemplary embodiment, the method 1000 is executedusing the process chamber 200 of FIG. 2A. Referring to FIGS. 1 and2A-2D, the method 1000 is described.

At block 1002, a first plasma is generated over an OLED 102 formed on asubstrate 106 that is disposed in the processing volume 299 of theprocess chamber 200. The first plasma can be a high-density plasmahaving an electron density of at least 10¹¹ cm⁻³. Generating the firstplasma generally includes supplying a flow of a pretreatment process gas(e.g., a single gas molecule or atom) to the processing volume 299 ofthe process chamber 200 and igniting that gas into a plasma to pretreatthe OLED 102 and the substrate 106. This first plasma pretreatment canimprove interface properties of the OLED 102 and the substrate 106 toimprove adhesion for when the first barrier layer 110 is formed over theOLED 102 and the substrate 106. In some embodiments, the first plasmacan be formed from a pretreatment process gas that includes anitrogen-containing and/or hydrogen-containing gas flow (e.g., N₂, H₂,NH₃, or N₂O) while in other embodiments, the first plasma can be formedfrom an inert gas (e.g., He or Ar). In some embodiments, the plasmagenerated can be dependent on the type of substrate being used. Forexample, an argon (Ar) plasma can be suitable for promoting adhesion toa PET substrate or a PEN substrate while a nitrogen (N₂) plasma can bemore suitable for promoting adhesion to a copper substrate. Furthermore,an ammonia (NH₃) plasma can be more suitable for promoting adhesion fora glass substrate.

The flow rate of the pretreatment gas to the chamber is dependent on thesize of the substrate and the process chamber. For example, for achamber sized to process a 500 mm by 730 mm substrate, the total flowrate of the pretreatment process gas including N₂ can be between about150 sccm and about 3,000 sccm, such as between about 250 sccm and about1,500 sccm, such as between about 300 sccm and about 900 sccm, such asabout 480 sccm. The first plasma can be formed by the linear microwaveplasma source (LPS) 233. The LPS 233 can have power supplied at bothends of the conductive stub 235 at a frequency of between about 1 GHzand about 10 GHz, such as about 2.45 GHz or about 5.8 GHz. The powerused is dependent on the size of the chamber, for example, for a chambersized for a 500 mm by 730 mm substrate, the power can be set betweenabout 500 W and about 8000 W, such as between about 500 W and about 5000W, such as between about 1000 W and 4000 W. Appropriate scaling may beused for chambers sized for other substrates where the power is set atbetween about 130 mW/cm² and about 2300 mW/cm², such as between about130 mW/cm² and about 1400 mW/cm², such as between about 270 mW/cm² andabout 1100 mW/cm². In other embodiments, the high-density plasma can beformed by inductively coupled plasma (ICP) source having a frequency ofbetween about 1 MHz and about 20 MHz.

At block 1004, one or more surfaces of the OLED 102 and the substrate106 are pretreated with the first plasma for a period of time duringwhich the first plasma having the electron density of at least 10¹¹ cm⁻³is maintained.

At block 1006, a second plasma is generated in the processing volume 299of the process chamber 200. The second plasma can be a high-densityplasma having an electron density of at least 10¹¹ cm⁻³. The gasesprovided to form the second plasma can include a silicon precursor gasand a nitrogen precursor gas, which are flowed into the processingvolume 299 of the processing chamber 200 through the plurality of lineargas distribution conduits 221. The silicon precursor gas is any suitablesilicon containing gas such as silane (SiH₄), disilane (Si₂H₆),trisilane (Si₃H₃), tetrasilane (Si₄H₁₀), silicon tetrafluoride (SiF₄),silicon tetrachloride (SiCl₄), dichlorosilane (SiH₂Cl₂), or mixturesthereof. The nitrogen precursor gas is any suitable nitrogen containinggas such as (N₂), ammonia (NH₃), diazene (N₂H₂) hydrazine (N₂H₄), ormixtures thereof. In some embodiments, a carrier gas is also providedsuch as argon (Ar), hydrogen (H₂), helium (He), derivatives thereof, ormixtures thereof. In one embodiment, silane (SiH₄), ammonia (NH₄) andnitrogen (N₂) are co-flowed through the plurality of linear gasdistribution conduits 221 and into the processing volume 299. Herein,the silicon precursor gas and the nitrogen precursor gas are co-flowedthrough the same linear gas distribution conduit 221. In otherembodiments, the precursor gases are flowed through separate gasdistribution conduits 221 to prevent the precursor gases fromprematurely reacting in the gas distribution conduits 221.

The flow rates of the precursor gases to the chamber are dependent onthe size of the substrate and the process chamber. For example, for achamber sized to process a 500 mm by 730 mm substrate, the total flowrate of a silicon precursor gas including SiH₄ is between about 150 sccmand about 3,000 sccm, such as between about 250 sccm and about 1,500sccm, such as between about 300 sccm and about 900 sccm, such as about480 sccm. The flow rate of nitrogen precursor gas including NH₃ to thechamber is between about 1,200 sccm and about 5,000 sccm, such asbetween about 2,000 sccm and about 4,000 sccm, such as about 3,000 sccm.When used, the flow rate of a carrier gas including Ar or N₂ is betweenabout 450 sccm and about 5,000 sccm, such as between about 500 sccm andabout 3,500 sccm, for example about 2,500 sccm. Appropriate scaling maybe used for chambers sized for other substrates where the gas flow ratioof SiH₄ to NH₃ (SiH₄:NH₃) can be between about 1:2 and about 1:6, forexample, about 1:3. The gas flow ratio of SiH₄ to Ar (SiH₄:Ar), when Aris used, can be between about 1:1 and about 1:20, for example, betweenabout 1:5 and about 1:10. The gas flow ratio of NH₃ to Ar (NH₃:Ar), whenAr is used, can be between about 1:1 and about 1:10, for example,between about 1:2 and about 1:5. The chamber pressure is maintainedbelow 1 Torr, such as between about 50 mTorr and about 250 mTorr, suchas below about 200 mTorr, such as below about 125 mTorr. The substrate106 can be spaced apart from linear gas distribution conduits 221 by aspacing distance of between about 3000 mil and about 10000 mil, such asabout 7000 mil.

The high-density plasma, where the electron density is more than about10¹¹/cm³, is formed using the carrier gas (when used), the siliconprecursor gas, and the nitrogen precursor gas by the linear microwaveplasma source (LPS) 233. The LPS 233 can have power supplied at bothends of the conductive stub 235 at a frequency of between about 1 GHzand about 10 GHz, such as about 2.45 GHz or about 5.8 GHz. The powerused is dependent on the size of the chamber, for example, for a chambersized for a 500 mm by 730 mm substrate, the power can be set betweenabout 500 W and about 8000 W, such as between about 500 W and about 5000W, such as between about 1000 W and 4000 W. Appropriate scaling may beused for chambers sized for other substrates where the power is set atbetween about 130 mW/cm² and about 2300 mW/cm², such as between about130 mW/cm² and about 1400 mW/cm², such as between about 270 mW/cm² andabout 1100 mW/cm². In other embodiments, the high-density plasma can beformed by inductively coupling a plasma source power (ICP) having afrequency of between about 1 MHz and about 20 MHz, such as about 13.56MHz.

At block 1008, the first barrier layer 110 including silicon andnitrogen is deposited over the OLED 102 by maintaining the second plasmafor a period of time. In one embodiment, the second plasma is maintainedto form a first barrier layer 110 having a thickness from about 50 Å toabout 5000 Å, such as about 100 Å to about 2500 Å, such as about 2000 Åor about 1000 Å. As described above, forming the first barrier layer 110with the high-density plasma can result in a barrier layer of a giventhickness (e.g., 1000 Å) with improved moisture-blocking andoxygen-blocking properties relative to a barrier layer of the samethickness formed with a lower-density plasma. It is thought that atleast some of the improved moisture-blocking and oxygen-blockingproperties of the barrier layer formed from the high-density plasma isdue to the reduced amount of damage to the barrier layer being formedfrom the high-density plasma that has a lower rate of ion bombardmentrelative to a lower-density plasma. The lower rate of ion bombardmentresults in less pin holes in the barrier layer formed and thehigh-density plasma results in a denser layer being formed, which bothlead to improved moisture-blocking and oxygen-blocking properties of thebarrier layer relative to a barrier layer formed from a lower-densityplasma.

At block 1010, the buffer layer 112 is formed (e.g., deposited) over thefirst barrier layer 110. In one embodiment, the buffer layer 112 isformed of hexamethyldisiloxane (HMDSO) layer. In some embodiments, thebuffer layer is formed in the process chamber 200 while in otherembodiments, the buffer layer 112 can be formed in another processchamber.

At block 1012, a third plasma is generated in the processing volume 299of the process chamber 200. The third plasma can be a high-densityplasma having an electron density of at least 10¹¹ cm⁻³. In someembodiments, the third plasma is generated using the same or similarmethod as described above in reference to generating the second plasma(i.e., same gases, gas flow rates, power and frequency supplied fromLPS, pressure, temperature, etc.).

At block 1014, the second barrier layer 114 including silicon andnitrogen is deposited over the OLED 102 by maintaining the third plasmafor a period of time. In one embodiment, the third plasma is maintainedto form a second barrier layer 114 having a thickness from about 50 Å toabout 5000 Å, such as about 100 Å to about 2500 Å, such as about 2000 Åor about 1000 Å.

Although the second plasma and the third plasma which are used to formthe respective barrier layers 110, 114 are described as beinghigh-density plasmas, in some embodiments at least one of the barrierlayers 110, 114 can be formed from a plasma having a lower density, suchas a plasma having an electron density around 10⁹ cm⁻³, for exampleusing a capacitively coupled plasma. In some of these embodiments, thebarrier layer formed from the lower-density plasma can help reduce astress mismatch between the barrier layers and the buffer layer inbetween the barrier layers. This reduced stress mismatch can helpprevent the encapsulant from cracking when the OLED device is subject toexternal stresses, such as bending.

FIG. 3A is a side cross-sectional view of an OLED device 300 includingthe OLED 102 and an encapsulant 311 formed over the OLED 102, accordingto another embodiment. The OLED device 300 is similar to the OLED device100 except that the OLED device 300 includes the encapsulant 311 insteadof the encapsulant 111 described above. The encapsulant 311 is similarto the encapsulant 111 described above except that the barrier layers110, 114 from the encapsulant 111 are replaced with barrier layers 310,314. Furthermore, the encapsulant 311 additionally includes a secondbuffer layer 316 and a third barrier layer 318.

In some embodiments, the barrier layers 310, 314 can be the same as thebarrier layers 110, 114 described above. In other embodiments, one ormore of the barrier layers can be formed of two portions including aportion formed using a high-density plasma and a second portion using alower-density plasma. For example, in the lower right side of FIG. 3A, acloseup of barrier layer 310 is shown including a first portion 310A anda second portion 310B. In one embodiment, the first portion 310A can beformed using a high-density plasma (i.e., a plasma having an electrondensity of greater than of around 10¹¹ cm⁻³) and the second portion 310Bcan be formed using a lower-density plasma (i.e., a plasma having anelectron density of around 10⁹ cm⁻³, such as an electron density fromabout 5*10⁷ cm⁻³ to about 5*10⁹ cm⁻³).

Any portions formed using a high-density plasma can be formed using themethods described above in reference to the barrier layer 110 of FIG. 1.The first portion 310A can have a thickness from about 50 Å to about5000 Å, such as about 100 Å to about 2500 Å. The first portion 310A andthe second portion 310B can be formed of the same material (e.g.,silicon nitride), but forming the portions 310A, 310B from plasmashaving significantly different densities (e.g., different by a factor of100 or more) can alter many properties of the resulting portions 310A,310B of the barrier layer. For example, in one embodiment the firstportion 310A can be deposited using a high-density plasma to form abarrier layer portion having a tensile stress and an improved WVTR(i.e., lower WVTR) relative to a portion of the same thickness formedfrom a lower-density plasma while the second portion 310B can bedeposited using a lower-density plasma to form a barrier layer portionhaving a compressive stress. The second portion 310B having thecompressive stress can form an improved interface with the buffer layer112 deposited over the first barrier layer 310 relative to a barrierlayer portion having a tensile stress. Thus, the resulting barrier layer310 including the portions 310A, 310B provides a barrier layer that issuperior to a barrier layer formed from only a high-density plasma oronly a lower-density plasma.

Although the barrier layer 310 is shown including two portions 310A,310B, in other embodiments the barrier layer may include additionalportions formed using other combinations of high-density plasmas andlower-density plasmas as well as including portions formed from plasmashaving other densities, such as a barrier layer including three or moreportions formed using at least three different plasmas including ahigh-density plasma (e.g., an electron density of at least 10¹¹ cm⁻³), amedium density plasma (e.g., an electron density of about 10¹⁰ cm⁻³),and a lower density plasma (e.g., an electron density of less than 10⁹cm⁻³). Furthermore, although only the barrier layer 310 is shownincluding multiple portions formed from plasmas having differentdensities, in some embodiments one or more of the barrier layers 314 and318 may include multiple portions formed from plasmas having differentdensities as well.

The second buffer layer 316 can be similar to the buffer layer 112described above in reference to FIG. 1. For example, in some embodimentsthe second buffer layer 316 is formed of the same materials using thesame methods as the buffer layer 112 described above. Similarly, thesecond barrier layer 314 and the third barrier layer 318 can be similarto the first barrier layer 110 or the second barrier layer 114 describedabove in reference to FIG. 1 or similar to the barrier layer 310described in reference to FIG. 3A. The encapsulant 311 can have a totalthickness from about 5,000 Å to about 25,000 Å.

FIG. 3B is a schematic plan view of a cluster tool 350 that can be usedto form the encapsulant 311 over the OLED 102 of the OLED device 300 ofFIG. 3A, according to one embodiment. The cluster tool 350 includes aconveyor 351 that leads to a transfer chamber 352. The cluster tool 350further includes a first process chamber 361, a second process chamber362, a third process chamber 363, a fourth process chamber 364, and afifth process chamber 365. Each process chamber 361-365 can include acorresponding plasma source 371-375. The plasma source of a givenprocess chamber can include, for example, an LPS, an ECR plasma source,an ICP source, or a CCP source. In some embodiments, a process chambercan include more than one plasma source, such as an LPS and a CCPsource.

The transfer chamber 352 can include a robot (not shown) to transfersubstrates 106 to and from each of the process chambers 361-365 and toand from the conveyor 351. The robot (not shown) in the environmentallycontrolled transfer chamber 352 (e.g., vacuum and/or low H₂O or O₂content environment) can be used to transfer the substrate 106 to eachof the different process chambers 361-365, so that each of the layers inthe encapsulant 311 can be successively formed to encapsulate each OLED102 on each substrate 106. Although five process chambers are shown inthe cluster tool 350, in other embodiments a cluster tool may includemore or less process chambers, such as dual process chamber tool whereone process chamber is used to form barrier layers or portions thereofusing high-density plasmas and the other process chamber is used to formbuffer layers and at least a portion of one barrier layer usinglower-density plasmas.

Each process chamber 361-365 can be a plasma enhanced chemical vapordeposition (PECVD) chamber, where some of the process chambers 361-365can be classified as high-density plasma chambers, such as chambers thatcan produce a plasma having an electron density of 10¹¹ cm⁻³ or higher,and some of the other process chambers 361-365 can be more generallyclassified as lower-density plasma chambers, such as chambers that canproduce a plasma having an electron density of around 10⁹ cm⁻³, such asan electron density from about 5*10⁷ cm⁻³ to about 5*10⁹ cm⁻³. Theprocess chamber 200 described above in reference to FIG. 2A employingthe linear microwave plasma source is an exemplary chamber that can beused to produce a high-density plasma chamber, but plasma chambersincluding an inductively coupled plasma (ICP) source or an electroncyclotron resonance (ECR) plasma source may also be used to generate thehigh-density plasmas used in forming the encapsulant 311. Exemplarylower-density plasma chambers can include capacitively coupled plasmachambers.

In one embodiment, the first process chamber 361, the third processchamber 363, and the fifth process chamber 365 can be used to depositbarrier layers or portions of barrier layers using high-density plasmas.For example, in this embodiment the first process chamber 361 can beused to deposit the first portion 310A of the first barrier layer 310,and the second process chamber 362 can be used to deposit the secondportion 310B of the first barrier layer 310 of the encapsulant 311.Furthermore, in this embodiment, the third process chamber 363 can beused to deposit the buffer layers 112, 316 of the encapsulant 311.Finally, the fourth and fifth process chambers 364, 365 can be used todeposit the second barrier layer 314 and the third barrier layer 318respectively of the encapsulant 311. In this embodiment, the first,fourth, and fifth process chambers 361, 364, and 365 can be configuredto form high-density plasmas while the second and third process chambers362, 363 can be configured to form lower-density plasmas. For example,the first, fourth, and fifth plasma sources 371, 374, 375 can be linearmicrowave plasma sources (LPS) while the second and third plasma sources372, 373 can be capacitively coupled plasma (CCP) sources.

FIG. 3C is a process flow diagram of a method 1100 of encapsulating theorganic light emitting diode (OLED) 102 with the encapsulant 311 of FIG.3A using the cluster tool 350 of FIG. 3B, according to one embodiment.Referring to FIGS. 3A-3C, the method 1100 is described.

At block 1102, the substrate 106 is transferred from the conveyor 351through the transfer chamber 352 and into the first process chamber 361.At block 1104, a high-density plasma (first plasma) is generated in thefirst process chamber 361 and the first portion 310A of the firstbarrier layer 310 is deposited over the OLED 102 with the high-densityplasma (first plasma). In some embodiments, the substrate and OLED maybe pretreated before executing block 1104 using a same or similaroperation described in reference to block 1004 of FIG. 2D above.

At block 1106, the substrate 106 is transferred from the first processchamber 361 through the transfer chamber 352 to the second processchamber 362. At block 1108, a lower-density plasma (second plasma) isgenerated in the second process chamber 362 and the second portion 310Bof the first barrier layer 310 is deposited over the OLED 102 with thelower-density plasma (second plasma). The density of the lower-densityplasma (e.g., 10⁹ cm⁻³) in block 1108 can differ from the density of thehigh-density plasma in block 1104 by a factor of at least 100.

At block 1110, the substrate 106 is transferred from the second processchamber 362 through the transfer chamber 352 to the third processchamber 363. At block 1112, a lower-density plasma (third plasma) isgenerated in the third process chamber 363 and the first buffer layer112 is deposited over the first barrier layer 310 with the lower-densityplasma (third plasma).

At block 1114, the substrate 106 is transferred from the third processchamber 363 through the transfer chamber 352 to the fourth processchamber 364. At block 1116, a high-density plasma (fourth plasma) isgenerated in the fourth process chamber 364 and the second barrier layer314 is deposited over the first buffer layer 112 with the high-densityplasma (fourth plasma).

At block 1118, the substrate 106 is transferred from the fourth processchamber 364 through the transfer chamber 352 to the third processchamber 363. At block 1120, a lower-density plasma (fifth plasma) isgenerated in the third process chamber 363 and the second buffer layer316 is deposited over the second barrier layer 314 with thelower-density plasma (fifth plasma).

At block 1122, the substrate 106 is transferred from the third processchamber 363 through the transfer chamber 352 to the fifth processchamber 365. At block 1124, a high-density plasma (sixth plasma) isgenerated in the fifth process chamber 365 and the third barrier layer318 is deposited over the second buffer layer 316 with the high-densityplasma (sixth plasma).

The methods 1000 and 1100 provide examples of forming encapsulants overan OLED with improved barrier properties against moisture and oxygeningress therethrough to the underlying OLED device when compared to anencapsulant formed using only a conventional capacitively coupled plasma(CCP) PECVD deposition process, as demonstrated in FIGS. 4A-4I. FIGS.4A-4I show comparative measurements of barrier properties and otherproperties of silicon nitride layers deposited using high-density plasmachemical vapor deposition (HDP-CVD) processes, according to embodimentsdescribed herein, and of silicon nitride films deposited usingconventional capacitive coupled plasma (CCP) PECVD deposition.

FIGS. 4A-4B show the % of Si—H bonds in FIG. 4A and the % of N—H bondsin FIG. 4B for silicon nitride layers formed using HDP-CVD and CCP-CVDwhen these silicon nitride layers are held at 85° C. and 85% relativehumidity from zero hours to less than about 1500 hours. As can be seenin FIG. 4A a 2000 Å HDP layer 415 and a 4000 Å HDP layer 417 of siliconnitride initially both showed fewer Si—H bonds than a 2000 Å CCP layer413 and a 5000 Å CCP layer 411 of silicon nitride at zero hours, but the% of Si—H bonds in the CCP silicon nitride layers 411 and 413 declinesover time. While Si—H bonds are not necessarily undesirable in a siliconnitride layer used as a barrier layer in a thin-film encapsulationstructure, the decline in the % of Si—H over time of the 2000 Å CCPlayer 413 and a 5000 Å CCP layer 411 indicate that the Si—H bonds arebeing replaced with undesirable Si—O bonds. This demonstrates therelative instability of conventionally deposited CCP silicon nitridelayers 411 and 413 when compared to the HDP silicon nitride layers 415and 417. FIG. 4B illustrates that both the HDP deposited layers and theCCP deposited layers are relatively stable with respect to the % of N—Hbonds over time.

FIG. 4C shows the % change in the concentration of Si—N bonds indeposited silicon nitride layers from zero hours to less than about 1500hours when exposed to 85° C. and 85% relative humidity. FIG. 4D showsthe % change in the concentration of Si—O bonds in the deposited siliconnitride layers of FIG. 4C over the same time period. The percentagechange in concentration values in 4C and 4D have been normalized. Asseen in FIGS. 4C and 4D the Si—O concentration of the CCP depositedlayers 411 and 413 increases with time and predictably results in adecrease in Si—N concentration in the deposited layers while the HDPsilicon nitride layers remain stable with no to little perceptible shiftin Si—O or Si—N over the same time period indicating that the HDPsilicon nitride layers have superior barrier properties to oxygenpenetration when compared to CCP silicon nitride layers.

FIGS. 4E-4G show FTIR spectrums of HDP (FIG. 4E) and CCP (FIGS. 4F and4G) silicon nitride layers after exposure to 85° C. and 85% relativehumidity at zero hours to about 1400 hours, and increments in between.FIG. 4F shows that a 2000 Å HDP silicon nitride layer shows little to nochange in the composition of the film from zero hours to about 1400hours of exposure. In particular, there was little to no change in theconcentrations of Si—O bonds and Si—N bonds observed up to 1400 hoursindicating that there was no to little undesirable oxygen penetration ofthe 2000 Å HDP layer. However, the conventional 5000 Å silicon nitridelayer shows measurable increases in the concentrations of Si—O bondsfrom measurements taken from zero hours (420) to 1300 hours (426) and asseen in FIG. 4F. Probable oxygen penetration is even more discernable inthe 2000 Å CCP layer from 0 hours (420) to 680 hours (424), 820 hours ofexposure (425), and 1300 hours of exposure (426) as the 2000 Å CCPlayers shows higher concentration of Si—O bonds at increasing timeintervals when compared to the 5000 Å CCP layers. FIGS. 4E-4Gdemonstrate that HDP silicon nitride layers, deposited according toembodiments disclosed herein, are a superior barrier to oxygenpenetration than conventionally deposited CCP silicon nitride layers

FIGS. 4H and 4I show the water vapor transmission rate (WVTR) of siliconnitride layers exposed to 40° C. and 100% relative humidity where lowerWVTR indicate the silicon nitride layer's resistance to permeation ofwater therethrough. FIG. 4I shows the 2000 Å HDP layer 417 compared tothe 2000 Å CCP layer 413, wherein the HDP layer has a relatively stableWVTR of about 1×10⁻⁴ g/m² day with little to no change between zerohours and about 140 hours while the 3000 Å CCP layer 413 failed afterabout 120 hours when it no longer exhibited a measurable resistance towater permeation. FIG. 4H shows the WTVR of silicon nitride HDP layersover time and up to between about 140 hours to about 275 hours,deposited according to embodiments disclosed herein, and having athickness of 500 Å, 1000 Å, and 2000 Å. Notably, the WVTR is stable foreach HDP silicon nitride layer over the time periods measured.

It is also noted that the HDP and the CCP deposited silicon nitridelayers have substantially similar transmittance and step coverageproperties. Both the HDP and CCP films had a greater than 90%transmittance at a 400 nm wavelength and a greater that 0.85 stepcoverage factor on a 2.5 μm step height pattern. HDP silicon nitridewill also allow for desirably thinner barrier layers in a thin filmencapsulation (TFE) structure, for example, conventional CCP siliconnitride layers in a TFE structure typically have a thickness of between0.5 μm and 1 μm or more than 1 μm. As shown in FIGS. 4H-4I, the 2000 Ålayer of HDP silicon nitride has significantly improved barrierproperties when compared to the 5000 Å layer of CCP silicon nitride.This allows silicon nitride barrier layers in a thin film encapsulationstructure deposited using a HDP to have a thickness of below about 5000Å, such as between about 500 Å and about 5000 Å, such as between about500 Å and about 3000 Å, such as between about 500 Å and 2000 Å or belowabout 2000 Å.

Table 1 (shown below) and FIGS. 5A-5F illustrate the effect biasing thesubstrate support can have on the properties of silicon nitride layersof Table 1 deposited using HDP-CVD processes. As seen in Table 1,biasing the substrate support enables the deposition of low stressand/or compressive stress silicon nitride layers while maintaining theimproved barrier properties of HDP-CVD silicon nitride layers comparedto CCP silicon nitride layers as seen in FIGS. 4A-4I. The processproperties and resulting silicon nitride film properties described inTable 1 are for a microwave linear plasma source (LPS) high densityplasma assisted CVD silicon nitride layer on a 500 mm by 730 mmsubstrate using SiH₄ and NH₃ precursors. The SiH₄ precursor flowrate was480 sccm and the NH₃ precursor flowrate was 2700 sccm and the SiH₄precursor, the NH₃, and the carrier gas, if used, were mixed prior todistribution into a chamber processing volume. No carrier gases wereflowed for samples HD1 to HD14. Sample HD15 had an Ar carrier gasflowrate of 1350 sccm and sample HD16 had an N₂ gas flowrate of 1350sccm. The substrate was initially heated to a processing temperature of90° C. for each sample HD1-HD16. The substrate temperature was monitoredduring deposition for samples HD3 to HD13, and it was observed that thesubstrate reached temperatures as high as 155° C., however, it isrecognized that OLED devices will thermally degrade at processtemperatures of more than about 100° C. and that the substratetemperature should be maintained at below about 100° C. during themanufacturing of thin film encapsulation (TFE) structures over apreviously formed OLED device. The frequency of the LPS power was 2.45GHz. Table 1 shows that the film stress of the HDP silicon nitrideexamples is responsive to changes in bias of the substrate support,where positive stress values indicate a tensile stress and negativestress values indicate a compressive stress.

TABLE 1 LPS Substrate Support Bias Deposition Refractive Wet EtchSubstrate Power Freq. set refl Load Thickness Rate Index Stress Si—H N—HRate Temp. Example Units Ref. Name W KHz W W W A/min A/min MPa % % A/min° C. HD1 2000 4467 1489 1.921 131 9.6 12.1 1249 HD2 3000 4501 1500 1.927320 5.0 11.6 441 HD3 3000 373 4000 2500 1500 4795 1598 1.923 −218 4.316.1 383 150 HD4 3000 373 3000 1700 1300 4675 1558 1.928 −170 4.5 16.2358 144 HD5 3000 373 2000 1300 700 4781 1594 1.921 43 4.9 15.3 408 150HD6 3000 373 2500 1500 1000 4785 1595 1.920 −22 4.4 15.9 397 155 HD72500 373 2500 1630 870 4659 1553 1.925 −200 6.4 14.9 542 135 HD8 2000373 2500 1790 710 4643 1548 1.915 −230 8.1 14.6 882 130 HD9 3000 3731500 985 515 4544 1515 1.922 25 4.9 15.3 449 135 HD10 2500 373 2000 1454546 4510 1503 1.921 −145 6.5 14.8 572 133 HD11 2500 373 1500 1060 4404605 1535 1.919 −44 6.2 14.3 567 137 HD12 2000 373 2000 1420 580 45281509 1.914 −170 7.7 13.6 876 130 HD13 2000 373 1500 1140 360 4558 15191.912 −137 7.9 13.9 1002 128 HD14 2000 415 4000 2500 1500 4641 15471.915 −343 7.4 14.8 865 HD15 2000 415 4000 2000 2000 4639 1546 1.920−297 6.3 13.7 574 HD16 2000 415 4000 1700 2300 4407 1469 1.920 −490 7.414.5 1005

FIGS. 5A-5F show the effect of substrate bias power (Bias set power (W))on barrier and other properties of silicon nitride layers depositedusing a microwave linear plasma source (LPS) high density plasma CVDmethod according to the embodiments described herein. FIGS. 5A-5F showsilicon nitride layers deposited using an LPS RF power of 2000 W(described as 2000 W MW in FIGS. 5A-5F), 2500 W (2500 W MW), and 3000 W(3000 W MW) where the RF power has a frequency of 2.45 GHz. Siliconnitride layers using the 2000 W, 3000 W, and 5000 W processes weredeposited on a 500 mm by 730 mm substrate with the substrate supportbiased at powers between 0 W and 4000 W using a 373 KHz frequency RFpower source. As can be seen in FIGS. 5A-5F, silicon nitride layerproperties of deposition rates (DR), refractive indexes (RI), and Si—Hconcentrations (Si—H %) remained substantially unchanged as thesubstrate bias power was increased from 0 W to 4000 W while N—Hconcentrations (N—H %) saw small increases and the wet etch rates (WER)saw small decreases with increasing substrate bias power. Notably, thefilm stress (Stress) of the HDP deposited silicon nitride layers wastunable based on the substrate support bias power, by moving from highlytensile stresses in the range of 100 MPa (tensile) to 320 MPa (tensile)with no bias power to 150 MPa (compressive) to 250 MPa (compressive)when 2500 W to 4000 W were applied to the substrate support. Overall,FIGS. 4A-4I illustrate how effective silicon nitride barrier layers canbe formed using HDP-CVD relative to silicon nitride barrier layersformed using CCP-CVD, and FIGS. 5A-5F illustrate how desirable stresslevels can be obtained for barrier layers formed using CCP-CVD orHDP-CVD by varying the bias applied to the substrate support.

Thus, the data from FIGS. 4A-4I and 5A-5F can be used to form animproved encapsulant. For example, the one or more barrier layers formedfrom the high-density plasma can be used to form barrier layers withimproved oxygen-blocking and moisture-blocking properties relative tobarrier layers formed from lower-density plasmas having the samethickness. Moreover, the one or more barrier layers formed from thelower-density plasma can help reduce a stress mismatch between thebarrier layers and the buffer layer in between the barrier layers. Thisreduced stress mismatch can help prevent the encapsulant from crackingwhen the OLED device is subject to external stresses, such as bending.Thus, an encapsulant that includes one or more barrier layers formedfrom high-density plasmas and one or more barrier layers formed fromlower-density plasmas can produce an encapsulant with improvedoxygen-blocking and moisture-blocking properties and improved durabilityin response to external stresses relative to an encapsulant includingbarrier layers formed only from a high-density plasma or a lower-densityplasma.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

The invention claimed is:
 1. A method of encapsulating an organic lightemitting diode (OLED) device, comprising: generating a first plasmacomprising silicon and nitrogen; depositing a first portion of a firstbarrier layer comprising silicon and nitrogen over the OLED device withthe first plasma; generating a second plasma comprising silicon andnitrogen; depositing a second portion of the first barrier layercomprising silicon and nitrogen over the first portion of the firstbarrier layer with the second plasma, wherein a density of the firstplasma and the second plasma differ by a factor of at least 100;generating a third plasma comprising silicon and nitrogen; anddepositing a third portion of the first barrier layer comprising siliconand nitrogen over the second portion of the first barrier layer, whereina density of the third plasma is different than at least the secondplasma.
 2. The method of claim 1, further comprising depositing a bufferlayer over the first barrier layer; and depositing a second barrierlayer over the buffer layer.
 3. The method of claim 2, wherein the firstbarrier layer is spaced apart from the second barrier layer in a firstdirection and the first barrier layer including the first portion andthe second portion has a thickness in the first direction of less than1000 Å.
 4. The method of claim 3, wherein the first barrier layer isspaced apart from the second barrier layer in a first direction, anencapsulant including the first barrier layer, the buffer layer, and thesecond barrier layer has a water vapor transmission rate of less than1×10⁻⁴ g/m² day, and the encapsulant has a total thickness in the firstdirection of less than 25,000 Å.
 5. The method of claim 2, wherein thefirst plasma has an electron density of at least 10¹¹ cm⁻³.
 6. Themethod of claim 5, wherein the second plasma has an electron density ofabout 10⁹ cm⁻³.
 7. The method of claim 2, wherein the buffer layer isdeposited in a third process chamber and the second barrier layer isdeposited in a fourth process chamber.
 8. The method of claim 1, whereinthe first plasma is generated in a first process chamber and the secondplasma is generated in a second process chamber.
 9. The method of claim8, wherein the first plasma is generated with a high-density plasmasource and the second plasma is generated with a capacitively coupledplasma source.
 10. The method of claim 1, wherein the density of thethird plasma is different than the first plasma and the second plasma.11. A method of encapsulating an organic light emitting diode (OLED)device, comprising: generating a first plasma comprising silicon andnitrogen in a first process chamber; depositing a first portion of afirst barrier layer comprising silicon and nitrogen over the OLED devicewith the first plasma; generating a second plasma comprising silicon andnitrogen in a second process chamber; depositing a second portion of thefirst barrier layer comprising silicon and nitrogen over the firstportion of the first barrier layer with the second plasma, wherein adensity of the first plasma and the second plasma differ by a factor ofat least 100; depositing a buffer layer over the first barrier layer ina third process chamber; depositing a second barrier layer over thebuffer layer in a fourth process chamber, wherein the first processchamber, the second process chamber, the third process chamber, and thefourth process chamber are arranged around a single transfer chamber;generating a third plasma comprising silicon and nitrogen prior todepositing the buffer layer; and depositing a third portion of the firstbarrier layer comprising silicon and nitrogen over the second portion ofthe first barrier layer, wherein a density of the third plasma isdifferent than at least the second plasma.
 12. The method of claim 11,wherein the first barrier layer is spaced apart from the second barrierlayer in a first direction and the first barrier layer including thefirst portion and the second portion has a thickness in the firstdirection of less than 1000 Å.
 13. The method of claim 11, wherein thefirst barrier layer is spaced apart from the second barrier layer in afirst direction, an encapsulant including the first barrier layer, thebuffer layer, and the second barrier layer has a water vaportransmission rate of less than 1×10⁻⁴ g/m² day, and the encapsulant hasa total thickness in the first direction of less than 25,000 Å.
 14. Themethod of claim 11, wherein the first plasma has an electron density ofat least 10¹¹ cm⁻³, and wherein the second plasma has an electrondensity of about 10⁹ cm⁻³.
 15. The method of claim 11, wherein thedensity of the third plasma is different than the first plasma and thesecond plasma.
 16. The method of claim 11, wherein the first plasma hasan electron density of at least 10¹¹ cm⁻³, the second plasma has anelectron density of about 10⁹ cm⁻³, and the third plasma has an electrondensity of about 10¹⁰ cm⁻³.
 17. A method of encapsulating an organiclight emitting diode (OLED) device, comprising: generating a firstplasma comprising silicon and nitrogen, the first plasma having a firstdensity; depositing a first portion of a first barrier layer comprisingsilicon and nitrogen over the OLED device with the first plasma;generating a second plasma comprising silicon and nitrogen, the secondplasma having a second density; depositing a second portion of the firstbarrier layer comprising silicon and nitrogen over the first portion ofthe first barrier layer with the second plasma, wherein the firstdensity of the first plasma differs from the second density of thesecond plasma by a factor of at least 100; generating a third plasmacomprising silicon and nitrogen, the third plasma having a third densitydifferent than the first density of the first plasma and the seconddensity of the second plasma; and depositing a third portion of thefirst barrier layer comprising silicon and nitrogen over the secondportion of the first barrier layer with the third plasma.
 18. The methodof claim 17, wherein the first plasma has an electron density of atleast 10¹¹ cm⁻³, the second plasma has an electron density of about 10⁹cm⁻³, and the third plasma has an electron density of about 10¹⁰ cm⁻³.19. The method of claim 17, further comprising depositing a buffer layerover the first barrier layer; and depositing a second barrier layer overthe buffer layer.
 20. The method of claim 19, wherein the first barrierlayer is spaced apart from the second barrier layer in a firstdirection, an encapsulant including the first barrier layer, the bufferlayer, and the second barrier layer has a water vapor transmission rateof less than 1×10⁻⁴ g/m² day, and the encapsulant has a total thicknessin the first direction of less than 25,000 Å.